| 摘要 |
PROBLEM TO BE SOLVED: To provide a thyristor wherein an ON-state voltage V<SB>T</SB>is made low without changing the size of conventional thyristor, and further a rate of rise of critical ON-state current di/dt is improved. SOLUTION: The thyristor 100 includes a p-type semiconductor layer 101 on a p-type semiconductor layer 2 connected to an anode electrode 1 at the surface, a p-type semiconductor layer 103 which has an impurity concentration higher than the p-type semiconductor layer 101 and resides in the p-type semiconductor layer 101 and on the upper surface of the p-type semiconductor layer 2, a p-type semiconductor layer 104 which has an impurity concentration higher than the p-type semiconductor layer 102 and resides in the p-type semiconductor layer 101 and on the upper surface of the p-type semiconductor layer 2 and between the p-type semiconductor layers 103, an n-type semiconductor layer 4 on the upper surface of the p-type semiconductor layer 101, and a p-type semiconductor layer 6 in the n-type semiconductor layer 4, and an n-type semiconductor layer 7 connected to a cathode electrode 8 and a p-type semiconductor layer 10 connected to a gate electrode 9 at the surface in the p-type semiconductor layer 6. COPYRIGHT: (C)2011,JPO&INPIT
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