发明名称 FAILURE DETECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a failure detection circuit capable of efficiently performing a test of a RAM macro output circuit. SOLUTION: The failure detection circuit is equipped with: a memory BIST 100; a plurality of RAM macro input selection circuits 110, 111 for selecting a macro test data signal S100 outputted from the memory BIST; RAM macros 120, 121 for inputting the selected macro test data signals S100; a BIST input selection circuit 200 for selecting output signals of the RAM macros 120, 121; RAM macro output selection circuits 130, 131 for selecting the output signals from the RAM macros 120, 121; flip-flops 140, 141 for holding the selected output signal; a parity generation circuit 400 for generating a parity signal from the macro test data signal S100; and parity check circuits 150, 151 for performing the parity check of the parity signal and the output signal held by the flip-flops. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011108325(A) 申请公布日期 2011.06.02
申请号 JP20090262546 申请日期 2009.11.18
申请人 NEC COMPUTERTECHNO LTD 发明人 OYAMA TOSHITADA
分类号 G11C29/12;G11C29/42 主分类号 G11C29/12
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