| 摘要 |
PROBLEM TO BE SOLVED: To keep processing accuracy of MOS transistors while stabilizing the characteristics of diode current in a configuration in which the MOS transistors and bipolar transistors are formed simultaneously. SOLUTION: A semiconductor device 100 includes MOS transistor forming regions (210, 220), and a bipolar transistor forming region 200 which includes an emitter lead-out region 202, a base lead-out region 204, and a collector lead-out region 206. Each region is separated by an element isolation insulating film 110. A silicide layer 124 is formed on the surface of each region. The element isolation insulating film 110 is formed, in which the surface height of a position in contact with at least the emitter lead-out region 202 is set to be equal to or more than the surface height of a substrate 102 of the emitter lead-out region 202, and the surface height of the position in contact with at least the emitter lead-out region 202 is set to be higher than the surface height of a position in contact with the MOS transistor forming regions (210, 220). COPYRIGHT: (C)2011,JPO&INPIT
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