| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in the breakdown voltage due to concentration of electric field, while arranging a bonding pad directly above for size reduction. SOLUTION: The lateral IGBT 1 having an emitter electrode 18, a collector electrode 20 and a gate electrode 16 formed on a surface of an n-type semiconductor epitaxial layer 5, is provided with an insulating layer 30 on the collector electrode 20 and gate electrode 16, provided with the bonding pad 32 connecting with the emitter electrode 18 on the insulating layer 30, and is further provided with an insulating portion 40 in an area B as a location where electric field is concentrated by the potential of the bonding pad 32, in the inside of the n-type semiconductor epitaxial layer 5. COPYRIGHT: (C)2011,JPO&INPIT
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