| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor device being excellent in a heat radiation property. SOLUTION: A source driver 1 includes a film base material 10, a semiconductor chip 20, and a heat radiation member 30. In a semiconductor chip 20, terminals are divided to a plurality of groups, and have a terminal group region in which terminals of respective groups are arranged and regions between groups formed in the adjacent terminal group regions. An interval between two adjacent terminals in the adjacent terminal group regions is provided to be wider than interval between adjacent terminals in the terminal group regions; in the film base material 10, slits 11, 12 piercing through the film base material 10 are formed to oppose to at least one region between groups. The heat radiation member 30 is composed of a first part formed at a mounting plane and a second part formed at an opposite side plane to the mounting plane, the first part and the second part being connected through the slits 11 to 14. COPYRIGHT: (C)2011,JPO&INPIT
|
