发明名称 SEMICONDUCTOR STORAGE DEVICE AND BOOSTING CIRCUIT
摘要 A boosting circuit includes first to fourth rectification elements, first to fourth MOS transistors, first to fourth capacitors, and a switch circuit. The switch circuit has a low level terminal connected to a first connection node between the first end of the third rectification element and the first end of the fourth rectification element, and a high level terminal connected to a second connection node between a second end of the third MOS transistor and a second end of the fourth MOS transistor. The switch circuit conducts changeover between a voltage at the low level terminal and a voltage at the high level terminal to output a resultant voltage to the output terminal.
申请公布号 US2011128792(A1) 申请公布日期 2011.06.02
申请号 US20100956423 申请日期 2010.11.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KUMAZAKI NORIYASU
分类号 G11C16/30;G05F1/10 主分类号 G11C16/30
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