| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a heater which is usable for the epitaxial growth of an SiC film. <P>SOLUTION: The heater includes a heating element heat-generated by energization. The heating element can be obtained, after the obtainment of an SiC sintered compact 1 having prescribed shape and electric specific resistance, by coating the surface of the SiC sintered compact 1 with a plurality layers of SiC thin films 2 to 5. The plurality of layers of the SiC thin films 2 to 5 are formed respectively at different film deposition temperatures, and the film deposition temperature is higher as it goes to the external side layer. Respective film deposition temperatures are preferably controlled to 1,400°C±50°C, 1,600±50°C, 1,800±50°C, and 2,000°C±50°C. <P>COPYRIGHT: (C)2011,JPO&INPIT |
