THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor having improved conductivity of source and drain electrodes while a manufacturing process thereof is simplified, and to provide a method for manufacturing the thin film transistor. SOLUTION: The method for manufacturing a thin film transistor includes the steps of: forming a gate electrode 103 on a substrate 101; forming a gate insulating layer 104 on the gate electrode 103; forming an amorphous silicon layer 105 on the gate insulating layer 104; forming an aluminum layer 111 on the amorphous silicon layer 105, forming a molybdenum tungsten layer 112 on the aluminum layer 111, and forming a source electrode 109 and a drain electrode 110 which composed of a layered product at least including the aluminum layer 111 and the molybdenum tungsten layer 112; and crystallizing a part of the amorphous silicon layer 105 by irradiating a laser beam on the amorphous silicon layer 105 using the source electrode 109 and the drain electrode 110 as a mask to form a channel region. COPYRIGHT: (C)2011,JPO&INPIT