| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial substrate by which gas reaction among material gases used for film formation is suppressed, and an epitaxial film having a uniform film thickness is formed at a uniform film formation speed. SOLUTION: In a step (S20) of forming an InAlGaN epitaxial film, gases are fed to the opposite area of the main surface of a substrate 15 from a first gas line 10 for feeding a first mixed gas containing a nitrogen gas and a group V element gas, a second gas line 20 for feeding a second mixed gas containing a nitrogen gas and a group III element gas, and a third gas line 30 for feeding a sub-flow nitrogen gas, which are arranged in order from the side of the substrate 15. In this step (S20) for forming the InAlGaN epitaxial film, the pressure in a reaction chamber 50 wherein the substrate 15 is arranged is 15 kPa or more and 25 kPa or less, and the flow rate of the nitrogen gas in the second mixed gas is 3.25 m/s or more and 3.35 m/s or less. COPYRIGHT: (C)2011,JPO&INPIT
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