| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer which has high gettering capability even when made thin, and has high flatness and free of misfit dislocation, and to provide a method of manufacturing the same. SOLUTION: Boron is diffused inward on a polished wafer (14) by supplying a diborane (B<SB>2</SB>H<SB>6</SB>) gas onto the polished wafer (14) to form a diffusion layer (12). A boron concentration in the diffusion layer (12) is set to be 1×10<SP>17</SP>to 1×10<SP>20</SP>atoms/cm<SP>3</SP>, and a film thickness thereof is set to be 0.1 to 10μm. After that, outward diffusion processing is carried out to diffuse part of boron in a surface layer area of the diffusion layer (12) into an atmosphere, and then a device active layer (11) is epitaxially grown. COPYRIGHT: (C)2011,JPO&INPIT
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