发明名称 |
Nonvolatile memory cells and nonvolatile memory devices including the same |
摘要 |
A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
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申请公布号 |
US2011128772(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100801533 |
申请日期 |
2010.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HO-JUNG;YOO IN-KYEONG;SHIN JAI-KWANG;KIM CHANG-JUNG;LEE MYOUNG-JAE;HONG KI-HA |
分类号 |
G11C11/00;G11C8/08 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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