发明名称 LEVEL SHIFTING CIRCUIT AND NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS USING THE SAME
摘要 PURPOSE: A level shifting circuit and a nonvolatile semiconductor memory apparatus using the same are provided to increase area efficiency by including a level shifting unit. CONSTITUTION: A controller(100) generates a selection signal and a driving control signal. A level shifting unit(200) enables a first shifting signal to a pumping voltage level. The level shifting unit enables a second shifting signal to a pumping voltage level. A first switching unit(20) applies a program voltage to a word line. A second switching unit(40) applies a pass voltage to the word line.
申请公布号 KR20110059235(A) 申请公布日期 2011.06.02
申请号 KR20090115898 申请日期 2009.11.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SUNG, MOON SOO
分类号 G11C16/04;G11C16/30 主分类号 G11C16/04
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