| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target having high relative density, low resistance, and capable of producing uniform and excellent oxide thin films such as an oxide semiconductor and a transparent conductive film. <P>SOLUTION: The sputtering target contains an oxide A shown below, and indium oxide (In<SB>2</SB>O<SB>3</SB>) having a bixbyite type crystallite structure. Oxide A contains indium element (In), gallium element (Ga) and zinc element (Zn), wherein the diffraction peak is observed at each position of the incidence angle (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, and 56.5° to 59.5° by the X-ray diffraction measurement (Cukα ray). <P>COPYRIGHT: (C)2011,JPO&INPIT |
