| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a bar-like structure light emitting element with a high degree of freedom to be mounted on an apparatus. <P>SOLUTION: A bar-like n-type semiconductor core 13 is formed on a substrate 11, then, a cylindrical p-type semiconductor layer 14a covering a surface of the semiconductor core 13 is formed. Next, part of a peripheral surface of the semiconductor core 13 is exposed, then the semiconductor core 13 including the exposed part 13a is cut-off from the substrate 11. <P>COPYRIGHT: (C)2011,JPO&INPIT |
