| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device including a memory element operated by a thin film transistor of a low off-state current without problems. <P>SOLUTION: The memory device is provided in which memory elements each being equipped with at least one thin film transistor having an oxide semiconductor layer are arranged in a matrix. The thin film transistor having the oxide semiconductor layer is high in field effect mobility and can reduce the off-state current, and hence can be favorably operated without problems. In addition, it can reduce power consumption. Such a memory device is effective particularly when a thin film transistor, for example, having an oxide semiconductor layer is disposed in a pixel of a display device, as it can be formed on the same substrate as the above. <P>COPYRIGHT: (C)2011,JPO&INPIT |
