| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device advantageous for shortening a boosting time and microfabrication. <P>SOLUTION: The semiconductor memory device includes: memory cell arrays 11 having N planes (N being an integer greater than one) with a plurality of memory cells arranged at each plane; a reference voltage generation circuit 31 for generating a first reference voltage and a second reference voltage higher than the first reference voltage; a boosting circuit 32 for supplying boosted voltages of the first and second reference voltages from the reference voltage generation circuit 31 to the planes; and a circuit 33 for controlling the boosting performance which supplies the first reference voltage to the boosting circuit 32 for choosing the (N-1) or less planes or supplies the second reference voltage to the boosting circuit 32 for choosing the N planes. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
