| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput of a laminate wafer by performing suitable processing process control using a temperature detecting unit for a bonding apparatus which heats and bonds a plurality of stacked semiconductor substrates. SOLUTION: A first embodiment relates to a method of correcting bonding conditions of the bonding apparatus which heats and bonds the plurality of stacked semiconductor substrates, the method including: a bonding step of heating and bonding the plurality of semiconductor substrates at a joint; a determination step of determining whether states associated with a semiconductor device meet previously set conditions; a temperature measurement step of installing the temperature detecting unit incorporating a temperature sensor at the joint by a transfer device and measuring a temperature distribution of the joint when it is determined in the determination step that the states meet the set conditions; and a correction step of correcting the bonding conditions of the bonding step based upon measurement results of the measurement step. COPYRIGHT: (C)2011,JPO&INPIT |
