发明名称 SEMICONDUCTOR DEVICE INCLUDING CARBON-CONTAINING ELECTRODE AND METHOD FOR FABRICATING THE SAME
摘要 In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.
申请公布号 US2011128667(A1) 申请公布日期 2011.06.02
申请号 US20090648337 申请日期 2009.12.29
申请人 DO KWAN-WOO;LEE KEE-JEUNG;KIM YOUNG-DAE;LEE MI-HYOUNG;LEE JEONG-YEOP 发明人 DO KWAN-WOO;LEE KEE-JEUNG;KIM YOUNG-DAE;LEE MI-HYOUNG;LEE JEONG-YEOP
分类号 H01G4/008;B05D5/12;C23C16/513;H01L21/71;H01L29/43 主分类号 H01G4/008
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