发明名称 |
SEMICONDUCTOR DEVICE INCLUDING CARBON-CONTAINING ELECTRODE AND METHOD FOR FABRICATING THE SAME |
摘要 |
In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.
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申请公布号 |
US2011128667(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20090648337 |
申请日期 |
2009.12.29 |
申请人 |
DO KWAN-WOO;LEE KEE-JEUNG;KIM YOUNG-DAE;LEE MI-HYOUNG;LEE JEONG-YEOP |
发明人 |
DO KWAN-WOO;LEE KEE-JEUNG;KIM YOUNG-DAE;LEE MI-HYOUNG;LEE JEONG-YEOP |
分类号 |
H01G4/008;B05D5/12;C23C16/513;H01L21/71;H01L29/43 |
主分类号 |
H01G4/008 |
代理机构 |
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