发明名称 |
Semiconductor Devices and Methods for Making the Same |
摘要 |
Semiconductor devices and methods for making such devices that are especially suited for high-frequency applications are described. The semiconductor devices combine a SIT (or a junction field-effect transistor [JFET]) architecture with a PN super-junction structure. The SIT architecture can be made using a trench formation containing a gate that is sandwiched between thick dielectric layers. While the gate is vertically sandwiched between the two isolating regions in the trench, it is also connected to a region of one conductivity type of the super-junction structure, thereby allowing control of the current path of the semiconductor device. Such semiconductor devices have a lower specific resistance and capacitance relative to conventional planar gate and recessed gate SIT semiconductor devices. Other embodiments are described.
|
申请公布号 |
US2011127601(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20090629232 |
申请日期 |
2009.12.02 |
申请人 |
KIM SUKU;MURPHY JAMES J;DOLNY GARY |
发明人 |
KIM SUKU;MURPHY JAMES J.;DOLNY GARY |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|