| 摘要 |
An electronic memory device is presented. The device comprises at least one basic unit (FIG. 2), which is configured as a memory cell for storing at least one bit of information. The basic unit comprises a vacuum cavity (FIG. 2, 2) for free charge carriers propagation therethrough, a region of charge carriers emission or entry into the vacuum cavity (FIG. 2, 10), an anode electrode (FIG. 2, 11) which are kept under controllable voltage conditions, and at least one floating gate electrode (FIG. 2, 12) accommodated in a path of said free charge carriers propagating through the vacuum cavity between the emission or entry region and the anode. The floating gate electrode serves for storing therein a charge indicative of the at least one bit of information. |
