发明名称 COMPOSITION FOR ETCHING COPPER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 PURPOSE: A composite for etching copper is provided to reduce a defect by removing impurities remaining on the cut part of a fuse line. CONSTITUTION: A fuse line with copper is prepared on a semiconductor substrate(S10). A fuse line is cut by irradiating a laser beam to the fuse line(S50). Copper and copper oxide remaining on the cut part of the fuse line are removed by applying the composite for etching copper to the semiconductor substrate. The cut part of the fuse line is minutely etched(S60). The composite for etching copper includes organic acid of 0.01 to 10 weight%, oxidizer of 0.01 to 1 weight%, and protic solvent.
申请公布号 KR20110059476(A) 申请公布日期 2011.06.02
申请号 KR20090116222 申请日期 2009.11.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JUNG DAE;LEE, DA HEE;CHAE, SEUNG KI;JUN, PIL KWON;LIM, KWANG SHIN
分类号 H01L21/304 主分类号 H01L21/304
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