PURPOSE: A single crystal growing method is provided to improve the growing speed of a single crystal by using raw materials of 10 to 90 nm. CONSTITUTION: Raw materials are inputted to a crucible(100). A seed is attached to a seed holder(300). A heating unit(600) heats the crucible. The seed holder with the seed is inputted to a growing device. Raw materials are inputted to the crucible in the growing device. A single crystal is grown on the seed by subliming the raw materials in the crucible.
申请公布号
KR20110059399(A)
申请公布日期
2011.06.02
申请号
KR20090116119
申请日期
2009.11.27
申请人
DONG-EUI UNIVERSITY INDUSTRY-ACADEMIC COOPERATIONFOUNDATION