发明名称 SINGLE CRYSTAL METHOD
摘要 PURPOSE: A single crystal growing method is provided to improve the growing speed of a single crystal by using raw materials of 10 to 90 nm. CONSTITUTION: Raw materials are inputted to a crucible(100). A seed is attached to a seed holder(300). A heating unit(600) heats the crucible. The seed holder with the seed is inputted to a growing device. Raw materials are inputted to the crucible in the growing device. A single crystal is grown on the seed by subliming the raw materials in the crucible.
申请公布号 KR20110059399(A) 申请公布日期 2011.06.02
申请号 KR20090116119 申请日期 2009.11.27
申请人 DONG-EUI UNIVERSITY INDUSTRY-ACADEMIC COOPERATIONFOUNDATION 发明人 SHIN, BYOUNG CHUL;LEE, WON JAE;YEO, IM GYU
分类号 C30B23/00;C30B29/36 主分类号 C30B23/00
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