| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pad structure of a semiconductor device which is provided directly on a dummy metal via. <P>SOLUTION: A semiconductor device 200 is equipped with: a semiconductor substrate 202; a mutual connection structure; a plurality of dummy metal vias 235; and a pad structure. The semiconductor substrate 202 incorporates a plurality of micro electronic elements. The mutual connection structure is provided on the semiconductor substrate 202, and has: a plurality of metal layers 210a-210i; and a plurality of IMD layers 220 for separating the metal layers. The metal layers 210a-210i include a top metal layer 210i, a bottom metal layer 210a, and at least two metal layers provided between the top metal layer 210i and the bottom metal layer 210a. The plurality of dummy metal vias 235 are formed in one or more IMD layers 220 provided between at least two metal layers. The pad structure is provided directly on the dummy metal vias 235. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
