发明名称 |
Apparatuses and Methods for Maskless Mesoscale Material Deposition |
摘要 |
Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
|
申请公布号 |
US2011129615(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100976906 |
申请日期 |
2010.12.22 |
申请人 |
OPTOMEC, INC. FKA OPTOMEC DESIGN COMPANY |
发明人 |
RENN MICHAEL J.;KING BRUCE H.;ESSIEN MARCELINO;MARQUEZ GREGORY J.;GIRIDHARAN MANAMPATHY G.;SHEU JYH-CHERNG |
分类号 |
B05D1/02;B05D1/12;B05D3/02;B05D3/06;B05D5/00;B05D5/06;B05D5/12;B05D7/00;G02B6/00;H05K3/00 |
主分类号 |
B05D1/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|