| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion layer laminate-type solid-state imaging element having high versatility and capable of preventing destruction of an MOS circuit due to excessive light. SOLUTION: The solid-state imaging element includes a plurality of pixels each including a pair of electrodes 14, 16 formed over a substrate 1, a photoelectric conversion layer 15 formed between the electrodes 14, 16, and an MOS circuit 5 formed on the substrate 1 to read a signal corresponding to a charge generated in the photoelectric conversion layer 15. The plurality of pixels include a pixel 31a for obtaining a signal for generating image data and a pixel 32a for obtaining a signal for controlling a bias voltage to be applied between the electrodes 14, 16. The imaging element includes a voltage step-up circuit 50 for applying a bias voltage corresponding to imaging conditions of main imaging using the pixel 31a between the electrodes 14, 16, and a control portion 21 for executing temporary imaging by the pixel 32a in accordance with the imaging conditions before main imaging. The voltage step-up circuit 50 variably controls the bias voltage in the main imaging depending on the level of a signal read from the pixel 32a by the temporary imaging. COPYRIGHT: (C)2011,JPO&INPIT |
