发明名称 WIRING CIRCUIT STRUCTURE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE USING THE STRUCTURE
摘要 A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height B of the bump from the element to be connected is B, the height of the supporting column is H, the height of the terminal is h, and the layer thickness of the to terminal is t, as measured from the upper face of the base insulating layer as the reference surface, the height H of the supporting column is determined to satisfy B<H<h+B wherein t<B, or h<H<h+B wherein t≧B. As a result, the supporting column functions as a spacer to suppress compression that causes the solder of the terminal to reach the electrode of the element.
申请公布号 US2011127657(A1) 申请公布日期 2011.06.02
申请号 US20100952404 申请日期 2010.11.23
申请人 NITTO DENKO CORPORATION 发明人 ODA TAKASHI;MORITA SHIGENORI
分类号 H01L23/495;H01L21/60 主分类号 H01L23/495
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