发明名称 |
Methods of forming a pattern using photoresist compositions |
摘要 |
In a photoresist composition, methods of forming a pattern using the same, and methods of manufacturing a semiconductor device using the same A photoresist film may be formed on a substrate by coating a photoresist composition including a polymer and a solvent. The polymer includes a first repeating unit and a second repeating unit. The first repeating unit has a diazoketo group and a second repeating unit has a group containing silicon. A photoresist pattern is formed by partially exposing the photoresist film and developing the photoresist film. A pattern having an improved etching resistance and uniformity of critical dimension is formed.
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申请公布号 |
US2011129781(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100952513 |
申请日期 |
2010.11.23 |
申请人 |
KIM KYOUNG-MI;KIM YOUNG-HO |
发明人 |
KIM KYOUNG-MI;KIM YOUNG-HO |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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