发明名称 SENSING ENVIRONMENTAL PARAMETER THROUGH STRESS INDUCED IN IC
摘要 A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.
申请公布号 US2011127627(A1) 申请公布日期 2011.06.02
申请号 US200913057075 申请日期 2009.07.30
申请人 NXP B.V. 发明人 HOOFMAN ROMANO;PIJNENBRUG REMCO HENRICUS WILHELMUS;PONOMAREV YOURI VICTOROVITCH
分类号 H01L31/0352;H01L29/66 主分类号 H01L31/0352
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