发明名称 LEAD FRAME, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE LEAD FRAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a lead frame which has no plating burrs caused by a plated layer along an circumferential edge serving as an outline of a lead frame material and around a pilot hole and can make a highly reliable semiconductor device, and the semiconductor device. <P>SOLUTION: After a through-hole 12 including the circumferential edge 14 of an outer periphery 13 of the lead frame material 11 on which a semiconductor element 24 is mounted and the pilot hole is formed, plating is applied. Thus, a metal-plated layer same as a surface plated layer 17 or a rear plated layer 18 is formed along the circumferential edge 14 of the lead frame material 11 or inside the through-hole 12. Since the through-hole 12 and the circumferential edge 14 to serve as the outline of the lead frame are thus coated with a plated layer not corroded by an etchant to form a metal plated layer 30, influence of side etching is not applied during a subsequent etching step, thereby preventing the plating burrs from occurring in the through-hole 12 and the circumferential edge 14. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011108941(A) 申请公布日期 2011.06.02
申请号 JP20090264163 申请日期 2009.11.19
申请人 MITSUI HIGH TEC INC 发明人 TAKAI KEIJI
分类号 H01L23/50 主分类号 H01L23/50
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