发明名称 METHOD FOR FORMING FILM BY SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a film by sputtering, which can easily obtain the film having high flatness without lowering a sputtering pressure. SOLUTION: The method for forming the film by sputtering is a method for forming the film on a substrate by sputtering, and includes controlling a magnetic field strength (unit: gauss [G]) in a direction perpendicular to a surface of a sputtering target at an erosion position of the target so as to satisfy the relational expression: magnetic field strength [G]≥sputtering target surface area [cm<SP>2</SP>]×14. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011105974(A) 申请公布日期 2011.06.02
申请号 JP20090260160 申请日期 2009.11.13
申请人 ASAHI KASEI CORP 发明人 MITAMURA TETSUTOSHI;SUZUKI MASARU
分类号 C23C14/34;H01F41/18 主分类号 C23C14/34
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