| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method that never causes a decline in defect density during a heat treatment, etc. that accompanies the formation of an electrode after forming defects, and reduces an energy loss during switching. SOLUTION: A method of manufacturing a semiconductor device having electrodes on both sides includes steps of: preparing a semiconductor substrate having opposing first and second principal planes; forming a pn-junction on the first principal plane side of the semiconductor substrate; forming an electrode on the first and second principal planes of the semiconductor substrate; introducing a defect wherein defects are introduced by casting a charged particle beam from the first or second principal plane side after formation of the electrodes; and performing annealing wherein a heat ray is cast from the first principal plane side to selectively restore the defects near the pn-junction to reduce the defect density. COPYRIGHT: (C)2011,JPO&INPIT
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