| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress reduction in the connection reliability due to a decrease in the thickness of a conductive adhesive material caused by movement of a connection plate in a semiconductor device incorporating a power transistor. <P>SOLUTION: The semiconductor device includes a semiconductor chip; a lead terminal; and a conductive connection plate having a lower surface positioned above the semiconductor chip and lead terminal and positioned on the side of the semiconductor chip and lead terminal and an upper surface on the opposite side from the lower surface. The connection plate has, on the lower surface, a first region, having a first surface electrically connected to the semiconductor chip with the adhesive material; a second region having a second surface electrically connected to the lead terminal with the adhesive material; and a third region connecting the first region and second region to each other. The third region has a third surface which is located vertically away from the second surface, when the second surface is connected to the lead terminal. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
