发明名称 |
FILM DEPOSITION SYSTEM AND FILM DEPOSITION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To suppress the differentiation of the composition of gas in a plasma generation space between the central part of each electrode and the peripheral part of the electrode even if the electrode is enlarged. SOLUTION: A film deposition chamber 100 includes a first electrode 120 and a second electrode 140. High frequency is input to the first electrode 120. The second electrode 140 is arranged so as to be confronted with the first electrode 120, and a flexible substrate 10 having a hole comes into contact therewith. An exhaust hole is formed at the second electrode 140. The exhaust hole exhausts a plasma generation space between the first electrode 120 and the second electrode 140 via the hole of the flexible substrate 10. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011106015(A) |
申请公布日期 |
2011.06.02 |
申请号 |
JP20090265194 |
申请日期 |
2009.11.20 |
申请人 |
FUJI ELECTRIC HOLDINGS CO LTD |
发明人 |
OSE NAOYUKI;SHIMIZU HITOSHI |
分类号 |
C23C16/455;C23C16/509;H01L21/205;H01L21/31 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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