发明名称 |
METHOD FOR DOPING NON-PLANAR TRANSISTORS |
摘要 |
Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.
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申请公布号 |
US2011129990(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100843726 |
申请日期 |
2010.07.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MANDREKAR TUSHAR V.;VENKATARAMAN SHANKAR;HUA ZHONG QIANG;HERNANDEZ MANUEL A. |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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