发明名称 |
DISPLAY DEVICE, TFT SUBSTRATE, AND METHOD OF FABRICATING THE TFT SUBSTRATE |
摘要 |
Provided are a display device, a thin-film transistor (TFT) substrate, and a method of fabricating the TFT substrate. The method includes: forming a gate electrode on a pixel region of a substrate; forming a gate insulating film on the gate electrode; forming a semiconductor layer on the gate insulating film to overlap the gate electrode; forming a source electrode and a drain electrode to overlap the semiconductor layer and thus form a channel region; and forming a data insulating film on the source electrode and the drain electrode and patterning the data insulating film such that part of a contact hole formed in the data insulating film overlaps the channel region.
|
申请公布号 |
US2011127531(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100780726 |
申请日期 |
2010.05.14 |
申请人 |
KIM DONG-GYU |
发明人 |
KIM DONG-GYU |
分类号 |
H01L33/00;H01L21/336;H01L29/786 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|