| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target which has excellent stability in the characteristics of the obtained thin film when film deposition is performed over a long term. <P>SOLUTION: The sputtering target is composed of an oxide sintered compact including In, Zn and Ge, and in which the crystal types of compounds on the surface and at the inside are substantially the same, and is produced by the following (a) to (e) steps: (a) mixing raw material compound powder to prepare; (b) molding the mixture to ≥6.0 mm; (c) rising temperature at ≤3°C/min; (d) performing sintering at 1,280 to 1,520°C for 2 to 96 hr; and (e) grinding the surface by ≥0.25 mm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
