发明名称 |
LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DIODE PACKAGE HAVING DISTRIBUTED BRAGG REFLECTOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a distributed Bragg reflector having high reflectivity over a wide wavelength range; and a light emitting diode chip and a light emitting diode package employing the same. <P>SOLUTION: This light emitting diode chip includes: a substrate; a light emitting structure positioned in an upper portion of the substrate and having an active layer arranged between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer; and a distributed Bragg reflector that reflects light emitted from the light emitting structure. The distributed Bragg reflector has reflectivities of 90% or more for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011109094(A) |
申请公布日期 |
2011.06.02 |
申请号 |
JP20100251687 |
申请日期 |
2010.11.10 |
申请人 |
SEOUL OPTO DEVICES CO LTD |
发明人 |
LEE CHUNG HOON;LEE SUM GEUN;JING SANG KI;SHIN JIN CHEUL;KIM JONG KYU;LEE SO RA |
分类号 |
H01L33/46;H01L33/08 |
主分类号 |
H01L33/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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