| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a structure and a method of manufacturing a fast recovery diode. <P>SOLUTION: A fast recovery diode 1 is provided with a first conduction-type base layer 2 having a cathode side 23 and an anode side 24 opposite to the cathode 23. A second conduction-type anode buffer layer 41 having a first depth and a first maximum doping concentration is arranged at the anode side 24. Further, a second conduction-type anode contact layer 42 having a second depth deeper than the first depth and a second maximum doping concentration higher than the first maximum doping concentration is arranged at the anode side 24. At a breakdown voltage, a space charge area of an anode junction is placed at a third depth between the first and the second depths. Between the second and the third depths lies a defective layer 43 disposed with a defective peak. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
