| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of adjusting the operation margin of a memory cell to an appropriate value even though a power source voltage supplied to a peripheral circuit is changed. <P>SOLUTION: The semiconductor device 100 is equipped with: an SRAM 200 including a memory cell array 201 and a peripheral circuit 202; and a memory cell voltage generating section 300 in which the memory cell voltage VMM ofαtimes (α>1) of a core power source voltage VDD is generated in accordance with the change of the core power source voltage VDD supplied to the peripheral circuit 202, and the memory cell voltage VMM is supplied to the memory cell array 201. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
