| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that, when graphite as a non-single crystal substrate is used as a substrate for forming a nitride semiconductor thin film such as GaN, the GaN thin film becomes polysilicon and causes many defectives in a crystal, and thus, the graphite is not used for a photodiode. <P>SOLUTION: This manufacturing method forms an amorphous carbon layer on a graphite substrate, a c-axis orientation film of AlN grown by an MOCVD method on the amorphous carbon layer, a low-temperature growing buffer layer formed of GaN on the AlN layer, an n-type GaN layer formed on the low-temperature growing buffer layer, a light absorbing layer formed of In<SB>x</SB>Ga<SB>1-x</SB>N or Al<SB>y</SB>Ga<SB>1-y</SB>N formed on the n-type GaN layer, a p-type GaN layer formed on the light absorbing layer, and a p-type GaN contact layer formed on the p-type GaN layer. By forming the photodiode directly on the graphite substrate, the photodiode having excellent characteristics can be obtained at a low cost. <P>COPYRIGHT: (C)2011,JPO&INPIT |
