| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a connection structure that has low connection resistance, high insulation reliability, and superior microcircuit connectivity. <P>SOLUTION: The connection structure is constituted by connecting an LSI chip having connection bumps arrayed at a peripheral part of the chip to a connection substrate with an anisotropic conductive film comprising at least a curing agent, a curable insulating resin, and conductive particles, wherein a standard deviation of the number of conductive particles present at a connection part of the connection bumps is ≥1.45 and smaller than larger one of ≤10% of the average number of the conductive particles present at the connection part and 2, ≥93% of conductive particles present at an inner part of the connection bumps are present independently and also present on a connection substrate surface side, the conductive particles present at the connection part of the connection bumps and at the inner part of the connection bumps have an average particle size of 1 to 10 μm, and the area of the connection bumps ranges from 500 to 10,000 μm<SP>2</SP>. <P>COPYRIGHT: (C)2011,JPO&INPIT |
