发明名称 METHOD OF PROCESSING OPTICAL DEVICE WAFER
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of processing an optical device wafer, which is capable of easily forming an altered layer in a range not reaching an optical device layer and capable of forming devices so that they have a predetermined thickness. <P>SOLUTION: The wafer processing method for splitting a wafer, which has an optical device layer laminated on a surface thereof and includes optical devices formed in regions delimited by multiple streets formed in a lattice pattern, into individual optical devices includes a step of attaching a protective member 30 onto a surface 20a of an optical device wafer 2, a step of applying laser light having a wavelength permeable to a substrate 20 along the streets 22 from the rear surface 20b side of the substrate with a focal point positioned on the inside of the substrate to form an altered layer 210 along the streets on the rear surface side beyond the optical device layer 21 in the inside of the substrate, a step of grinding the rear surface 20b of the substrate so that the substrate has a predetermined thickness, and a step of applying an external force to the optical device wafer to split the optical device wafer along the streets 22 having the altered layer 210 into individual optical devices. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011108856(A) 申请公布日期 2011.06.02
申请号 JP20090262492 申请日期 2009.11.18
申请人 DISCO ABRASIVE SYST LTD 发明人 HOSHINO HITOSHI;NOMARU KEIJI
分类号 H01L21/301;B23K26/00;B23K26/40;H01L21/304;H01L33/02 主分类号 H01L21/301
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