| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, using the oxide semiconductor, which is excellent in off characteristics and carrier mobility, and has high quality, and to provide a method of manufacturing the same. SOLUTION: The thin film transistor has a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer consisting of an oxide semiconductor. Then a buffer layer made of carbon is provided between the active layer and source electrode, and the active layer and drain electrode. COPYRIGHT: (C)2011,JPO&INPIT
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