| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device enabling detection of a crack in a semiconductor substrate and a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes: a first conductivity type semiconductor substrate 10; and a first exposure part 26 and a second exposure part 26 exposed to the outside. The semiconductor substrate 10 includes: a first conductivity type first semiconductor region 12; and a second conductivity type second semiconductor region 13A reverse to a first conductivity type. A P-N junction is formed between the first semiconductor region 12 and the second semiconductor region 13A. The first semiconductor region 12 and the second semiconductor region 13A are connected to the first exposure part 26 and the second exposure part 26 respectively so that the diode characteristics of the P-N junction can be measured through the first exposure part 26 and the second exposure part 26. The second semiconductor region 13A is formed in a belt-like shape extended along the outer periphery 11 of the semiconductor substrate 10. The outer end of the second semiconductor region 13A is positioned inside the outer-peripheral end of the semiconductor substrate 10. COPYRIGHT: (C)2011,JPO&INPIT
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