METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a large-diameter silicon carbide substrate having superior crystallinity. SOLUTION: The method of manufacturing a silicon carbide substrate includes a step of preparing a plurality of SiC substrates 20 consisting of single crystal silicon carbide, a step of arranging a supporting substrate 10 to touch one main surfaces 20C of the plurality of SiC substrates 20 while the plurality of SiC substrates 20 are arranged side by side in plan view, and a step of interconnecting the plurality of SiC substrates 20 by means of the supporting substrate 10. In the step of interconnecting the plurality of SiC substrates 20, a step of heating the supporting substrate 10, and a step of cooling the supporting substrate 10 are carried out repeatedly. COPYRIGHT: (C)2011,JPO&INPIT