发明名称 |
SEMICONDUCTOR COMPONENT WITH INTEGRATED HALL EFFECT SENSOR |
摘要 |
A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration.
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申请公布号 |
US2011127583(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20080593493 |
申请日期 |
2008.03.26 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
UHLIG THOMAS;FUERNHAMMER FELIX;ELLMERS CHRISTOPH |
分类号 |
H01L27/22 |
主分类号 |
H01L27/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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