发明名称 |
PVD TARGET WITH END OF SERVICE LIFE DETECTION CAPABILITY |
摘要 |
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.
|
申请公布号 |
US2011126397(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US201113022221 |
申请日期 |
2011.02.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIAO YI-LI;YU CHEN-HUA;WANG JEAN;SHEU LAWRANCE |
分类号 |
B23P11/00;B29C41/02;B29C41/42 |
主分类号 |
B23P11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|