发明名称 PVD TARGET WITH END OF SERVICE LIFE DETECTION CAPABILITY
摘要 A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.
申请公布号 US2011126397(A1) 申请公布日期 2011.06.02
申请号 US201113022221 申请日期 2011.02.07
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSIAO YI-LI;YU CHEN-HUA;WANG JEAN;SHEU LAWRANCE
分类号 B23P11/00;B29C41/02;B29C41/42 主分类号 B23P11/00
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