| 摘要 |
<p>PURPOSE: A method for forming a micro pattern of a semiconductor device is provided to finish patterning with only two mask processes in a spacer patterning process, thereby reducing the manufacturing costs of the semiconductor device. CONSTITUTION: A pad pattern is formed in a peripheral area while a line type sacrificial film pattern(21) is formed in a cell area of a semiconductor substrate(10). A spacer is formed on the sidewalls of the sacrificial film pattern and the pad pattern. An interlayer insulating film and a reflection preventing film(42) are successively deposited on the frontal surface of the semiconductor substrate including the sacrificial film pattern. A photosensitive pattern(44) is formed on the reflection preventing film. The reflection preventing film, the interlayer insulating film, and the sacrificial film pattern are successively etched by the photosensitive pattern as a mask.</p> |
