| 摘要 |
The manufacture of a submillimetric grid includes the production of a mask having submillimetric openings, referred to as a network mask, on the main face, from a solution of colloidal nanoparticles with a given glass transition temperature Tg, the drying of the masking layer at a temperature below the Tg; the formation of the electroconductive grid from the network mask including in this order: deposition of at least one electroconductive material, referred to as grid material, having an electricity resistivity of less than 10−5 ohm.cm; removal of the masking layer, revealing the mother grid; optional deposition, by electrodeposition, of an electroconductive material, referred to as overgrid material, the surface subjacent to the mother grid then being dielectric; a detachment, of the mother grid or the overgrid, of a thickness of at least 500 nm. The invention also relates to the detached grid. |
