发明名称 Verfahren zum Herstellen eines Einkristalls, Flussbegradigungszylinder und Einkristall-Hochziehvorrichtung
摘要 <p>For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm2) during a post-addition-pre-growth period. By controlling the flow velocity of the inert gas to be in the above-described range during the post-addition-pre-growth period, the inert gas flows smoothly even when the pressure within the cylinder is relatively high. Evaporation of a volatile dopant because of a reverse flow of the inert gas can be restrained. The volatile dopant can be prevented from adhering to the flow straightening cylinder in an amorphous state, and the volatile dopant can be prevented from dropping into a melt or sticking on the melt while growing a crystal. Foulings can be easily removed.</p>
申请公布号 DE112008003953(T5) 申请公布日期 2011.06.01
申请号 DE20081103953T 申请日期 2008.07.25
申请人 SUMCO TECHXIV CORP. 发明人 KAWAZOE, SHINICHI;OGAWA, FUKUO;NARUSHIMA, YASUHITO;KUBOTA, TOSHIMICHI
分类号 C30B29/06 主分类号 C30B29/06
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